fuji discrete package igbt n n features ? square rbsoa ? low saturation voltage ? less total power dissipation ? minimized internal stray inductance n n applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply n n outline drawing n n maximum ratings and characteristics ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 600 v gate -emitter voltage v ges 20 v dc t c = 25c i c 25 20 collector current dc t c =100c i c 100 10 a 1ms t c = 25c i c pulse 80 igbt max. power dissipation p c 75 w fwd max. power dissipation p c 35 w operating temperature t j +150 c storage temperature t stg -40 ~ +125 c ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =600v 1.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 20 a gate-emitter threshold voltage v ge(th) v ge =20v i c =10ma 5.5 8.5 collector-emitter saturation voltage v ce(sat) v ge =15v i c =10a 3.0 input capacitance c ies v ge =0v 700 output capacitance c oes v ce =10v 150 pf reverse transfer capacitance c res f=1mhz 20 t on v cc =300v 1.2 t r i c =10a 0.6 t off v ge = 15v 1.0 switching time t f r g =220 w 0.35 t on v cc =300v 0.16 t r i c =10a 0.11 t off v ge =+15v 0.30 t f r g =22 w 0.35 diode forward on-voltage v f i f =10a v ge =0v 3.0 v reverse recovery time t rr i f =10a , v ge =-10v, di/dt=100a/ s 300 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 1.66 r th(j-c) diode 3.57 n n equivalent circuit turn-on time turn-on time turn-off time turn-off time thermal resistance v s s c/w
0 1 2 3 4 5 6 0 5 10 15 20 25 8v 10v v ge =20v, 15v, 12v collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 5 6 0 5 10 15 20 25 8v 10v 12v v ge =20v,15v collector current vs. collector-emitter voltage t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 i c = 20a 5a 10a collector-emitter voltage vs. gate-emitter voltage t j =25c collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 5 10 15 20 25 0 2 4 6 8 10 12 i c = 20a 5a 10a collector-emitter voltage vs. gate-emitter voltage t j =125c collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 0 5 10 15 20 10 100 1000 t f t r t off t on switching time vs. collector current v cc =300v, r g =22 w , v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] collector current : i c [a] 0 5 10 15 20 10 100 1000 t f t r t off t on switching time vs. collector current v cc =300v, r g =22 w , v ge =15v, t j =125c switching time : t on , t r , t off , t f [nsec] collector current : i c [a]
0 100 200 10 100 1000 t f t r t off t on switching time vs. r g v cc =300v, i c =10a, v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] gate resistance : r g [ w ] 0 100 200 10 100 1000 t f t r t off t on switching time vs. r g v cc =300v, i c =10a, v ge =15v, t j =125c switching time : t on , t r , t off , t f [nsec] gate resistance : r g [ w ] 0 5 10 15 20 25 30 35 10 100 1000 c res c oes c ies capacitance vs. collector-emitter voltage t j =25c capacitance : c oes , c res , c ies [pf] collector-emitter voltage : v ce [v] 0 10 20 30 40 50 60 0 100 200 300 400 500 collector-emitter voltage : v ce [v] gate charge : q g [nq] 0 5 10 15 20 25 v cc =200v, 300v, 400v gate-emitter voltage : v ge [v] dynamic input characteristics t j =25c 0 5 10 15 20 0 50 100 150 25c 125c reverse recovery time vs. forward current v r =200v, -di / dt =100a/sec reverse recovery time : t rr [nsec] forward current : i f [a] 0 5 10 15 20 0 1 2 3 4 5 25c 125c reverse recovery current vs. forward current v r =200v, -di / dt =100a/sec reverse recovery current : i rr [a] forward current : i f [a]
0 100 200 300 400 500 600 700 0 5 10 15 20 25 reverse biased safe operating area +v ge =15v, -v ge < 15v, t j < 125c, r g > 2 2 w collector current : i c [a] collector-emitter voltage : v ce [v] 5 10 15 20 25 0 50 100 150 short circuit current : i sc [a] t sc gate voltage : v ge [v] 0 20 40 60 short circuit time : t sc [s] typical short circuit capability v cc =400v, r g =2 2 w , t j =125c i sc 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 5 10 15 20 25 25 c t j =125c forward voltage vs. forward current forward current : i f [a] forward voltage : v f [v] 0 50 100 150 200 250 t rr reverse recovery time : t rr [nsec] -di / dt [a/sec] 0 100 200 300 400 500 600 0 2 4 6 8 10 reverse recovery current : i rr [a] i rr reverse recovery characteristics vs. -di / dt i f =10a, t j =125c 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 igbt fwd transient thermal resistance thermal resistance : rth(j-c) [c/w] pulse width : p w [sec] p.o. box 702708-dallas, tx 75370 phone (972) 233-1589 fax (972) 233-0481 www.collmer.com
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